Session 12-4

A 1.92μs-Wake-Up Time Thick-Gate-Oxide Power Switch Technique for
Ultra Low-Power Single- Chip Mobile Processors

 

Abstract

A technique for controlling rush current and wake-up time of thick-gate-oxide power switches is described. Suppressing the variation of rush current on PVT allows shorter wake-up times, which can reduce leakage currents in a mobile processor. Wake-up takes 1.92us and leakage current is reduced by 96.9% in an application CPU domain. Probing the rush current indicated accurate control by the technique.