Session 18-5

A 70nm 16Gb 16-Level-Cell NAND Flash Memory

 

Abstract

A 16Gb 16-level-cell (16LC) NAND Flash memory using 70nm Design Rule has been developed. This 16LC NAND flash memory can store 4bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash with the same design rule. New programming method achieves 0.62MB/s programming throughput.