Session 8-1

A Compact eFUSE Programmable Array Memory for SOI CMOS

 

Abstract

Demonstrating a >10X density increase over traditional VLSI fuse circuits, a compact eFUSE programmable array memory configured as a 4Kb one-time programmable ROM (OTPROM) is presented using a 6.2um2 NiSix silicide electromigration 1T1R cell in 65nm SOI CMOS. A 20us programming time at 1.5V is achieved by asymmetrical scaling of the fuse and a shared differential sensing scheme. Having zero process cost adder, eFUSE is fully compatible with standard VLSI manufacturing.