Session 8-2

A 512x8 Electrical Fuse Memory with 15μm² Cells Using 8-sq
Asymmetric Fuse and Core Devices in 90nm CMOS

 

Abstract

A 15um2 cell 4Kb electrical fuse memory is designed in 90nm CMOS using core devices only. The N+ 8-sq asymmetric fuses are used to enhance fuse uniformity, reliability, and aggregate electro-migration. High-gain cascade amplifiers sense small resistance differences to achieve a 2.25V program voltage in 1us. A sufficient design window is derived and verified by using on-chip resistance monitor without area overheads.