Session 11A-3

Achieving 9ps Unloaded Ring Oscillator Delay
inFuSI/HfSiON with 0.8 nm EOT

 

Abstract

We achieved 635/250uA/um at Ioff=20pA/um unstrained FuSI/HfSiON nMOS/pMOS devices (Vdd=1.1V, Ioff=20pA/um, Jg=20/8 mA/cm2) representing a 20%/2% device improvement compared to our previous report [1]. This was reached by a careful optimization of the nitrogen content into our HfSiON dielectric. Second, we demonstrate that the nitrogen content impacts the gate oxide integrity as well as PBTI and NBTI. We also report for the first time a 0.8 nm EOT HfSiON dielectric with Ni-FuSI gate with a 9ps delay.