Session 11B-1
Advanced Analysis and Modeling of MOSFET Characteristic
Fluctuation Caused by Layout Variation
Abstract
| We report an advanced method of analyzing and modeling MOSFET characteristic fluctuations, focusing on gate space dependence, STI width dependence, and interaction between gate-STI distance and STI width in 65-nm node technology with a 40-nm-gate length. These dependences haven't been treated by the conventional BSIM models. Gate space dependence is modeled by treating stress and TED as separate causes. By bringing these dependences to the BSIM model, advanced CMOS circuit performances are estimated more accurately. |