Session 11B-3
Discrete Dopant Fluctuated 20nm/15nm-Gate Planar CMOS
Abstract
| We have, for the first time, experimentally quantified random dopant distribution (RDD) induced Vt standard deviation up to 40mV for 20nm-gate planar CMOS. Discrete dopants have been statistically positioned in the 3D channel region to examine associated carrier transportation characteristics, concurrently capturing |