Session 12B-1

A Scalable Self-Aligned Contact NOR FlashTechnology

 

Abstract

A highly manufacturable self-aligned contact ETOXTM NOR flash memory technology scalable beyond the 40nm node is presented. The technology has been demonstrated on an MLC-capable 256Mb array at the 65nm node with the smallest cell area (0.036mm2) reported to date. Key features include aggressively scaled drain space, symmetric S/D layout for superior lithography and device scaling, novel self-aligned contact integration with excellent spacer reliability, and equivalent CMOS performance to the conventional ETOXTM process flow. (Keywords: Flash, NOR, ETOXTM,, SAC).