Session 12B-2
A Highly Reliable Self-Aligned Graded Oxide WOx Resistance
Memory: Conduction Mechanisms and Reliability
Abstract
| WOx formed by plasmas oxidation shows promising multi-bit/cell resistance memory characteristics [1]. The simple memory is completely self-aligned, requiring no additional masks and has a small 6F2 cell size. In this work we introduce a graded oxide device that is highly reliable (250 C baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively. |