Session 12B-5

Scalable Cell Technology Utilizing Domain WallMotion
for High-speed MRAM

 

Abstract

We have demonstrated that our SPRAM (SPin-transfer torque RAM) with a CoFeB/Ru/CoFeB SyF structure in a free layer improves immunity against read disturbance due to its high thermal stability and realizes a magnetic information retention of over 10 years. It was also shown that the SyF free layer reduces dispersion of write current density, thereby providing an adequate margin between the read and write currents.