Session 3A-1

SRAM Critical Yield Evaluation Based onComprehensive Physical / Statistical Modeling,
 Considering Anomalous Non-Gaussian IntrinsicTransistor Fluctuations

 

Abstract

Critical SRAM yield evaluation is presented based on comprehensive physical modeling and statistical analysis of transistor fluctuations for 65nm-node MOSFETs. Atomistic-3D-TCAD simulations reveal the origins of the non-Gaussian Vth-distribution that causes large sVth deviation from the Pelgrom-relationship for specific L/W. By using realistic statistical compact-modeling and fast-Monte-Carlo circuit-simulations, it was demonstrated that the appropriate cell-design recognizing the anomalous sVth enables to rescue significant possible yield loss caused by the particular behaviors of intrinsic transistor fluctuations.