Session 3A-3
1st Quantitative Failure-Rate Calculation for The Actual
Large-Scale SRAM
Using
Ultra-Thin Gate-Dielectric with Measured Probability
of The
Gate-Current
Fluctuation and Simulated Circuit Failure-Rate
Abstract
| We investigated the influence over intermittent SRAM failure by gate current, Ig, fluctuation for the first time. In this paper, we also describe the difference of SRAM failure due to Ig flutuations between MOS transistors before and after stressing. We have quantitatively confirmed that Ig fluctuation after stressing causes SRAM failure. |