Session 3B-1

Advanced Electrical Characterization Toward(Sub) 1nm EOT
HfSiON − Hole Trapping in PFETand L-Dependent Effects

 

Abstract

Unexpected VTinstability in pMOS was demonstrated for HfSiON with EOT=1nm. These traps were successfully identified as hole traps in the HfSiON bulk using a modified leakage free CP technique. Hole trap density depends on the Hf and Nprofile in the film and significantly lowers the NBTI lifetime. Largest hole trap densities were found in thin Hfrich films thus being a concern for further EOT scaling toward sub 1nm EOT.