Session 4B-1

SOI CMOS Technology with 360GHz f_T NFET, 260GHz f_T PFET, and Record Circuit
Performance for Millimeter-Wave Digital and Analog Systemon- Chip Applications

 

Abstract

We present record-performance RF devices and circuits for an SOI CMOS technology, at 35nm Lpoly. Critical RF/analog figure of merits in FET are measured and modeled to enable high-performance circuit design. Measurement results show peak fT's of 340GHz and 240GHz for 35nm Lpoly NFET and PFET, respectively. High-Q, high-density vertical native capacitors (VNCAPs) and on-chip inductors are integrated. RF-operable ring oscillator (RFRO) demonstrates a 3.58psec delay and a SSB phase noise of -107dBc/Hz at 1MHz offset. LC-tank VCO operates at 70GHz with 9.5% tuning range. The maximum operating frequency of a static CML divider is 93GHz while dissipating 52.4mW.