Session 4B-2

Technology Scaling and Device Design for 350 GHzRF
Performance in a 45nm Bulk CMOS Process

 

Abstract

Power gain (fMAX) of 350GHz and cut-off frequency (fT) of 280 GHz is demonstrated for 36nm Lpoly devices in a 45nm bulk CMOS process. A record fT of 350GHz (intrinsic fT 425GHz), without any loss of fMAX is seen in 28nm Lpoly devices. Combination of advanced lithography and liner stress effect can be leveraged to further boost fT and fMAX by 14% with a relaxed pitch device. Comparison with 90 and 65nm nodes illustrates the impact of scaling and parasitics.