Session 4B-3

Reliable 3D Damascene MIM Architecture Embedded into Cu Interconnect
for a Ta₂O₅ Capacitor Record Density of 17 fF/μm²

 

Abstract

A new 3D Damascene architecture requiring only one additional mask is introduced for high density MIM capacitors. TiN Ta2O5 TiN stack deposited by PEALD was integrated between Cu interconnect levels to maximize quality factor Q, reaching up to 17 fF per μm2 capacitance. High performance, breakdown voltages over 15 V and good linearity, make this capacitor an unique solution for analog and RF applications in Cu BEOL.