Session 5A-2

Dipole Moment Model Explaining nFET V_t Tuning Utilizing
La, Sc, Er, and Sr Doped HfSiON Dielectrics

 

Abstract

A dipole moment model explaining Vt tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented. La, Sc, Er, and Sr dopants are utilized. These dopants tune Vt in the range of 250-600 mV. Vt tuning is proportional to the net dipole moment associated with the Hf-O and rare earth (RE)-O bonds at the high-k/SiO2 interface. LaOx is the most effective dopant based on Vt, mobility, and reliability.