Session 6B-2

An Integrated Phase Change Memory Cell With
GeNanowire Diode For Cross-Point Memory

 

Abstract

We demonstrate a novel phase change memory cell utilizing doped nanowire pn-junction diode both as a bottom electrode and a memory cell selection device for a cross-point memory array. Using an isolated vertical nanowire in each cell, the contact area is below the lithography limit. Very low SET programming current of 30 uA is achieved. RESET/SET resistance ratio is 100x. The diode provides 100x isolation between forward and reverse bias in the SET state.