Session 6B-4

Highly Scalable Phase Change Memory with CVDGeSbTe
for Sub 50nm Generation

 

Abstract

We first present a PRAM with confinement of chemically vapor deposited GeSbTe for sub 50nm generation PRAMs. By adopting confined GeSbTe having hexagonal phase, we could reduce the reset current below ~260uA and our results indicate that the confined cell structure of 50nm contact is applicable below 50nm design rule due to small GeSbTe size based on direct top electrode contact, reduced reset current, minimized etch damage, and low thermal disturbance effect.