Session 7B-1

Technology Breakthrough of Low Temperature, Low Defect, and Low Cost SiGe
Selective Epitaxial Growth (L³ SiGe SEG) Process for 45nm Node and Beyond

 

Abstract

We have developed low temperature, low defect and low cost SiGe selective epitaxial growth process with a high throughput batch type CVD system. We improved the PMOS channel compressive stress, the junction leakage and the NMOS short channel effects. In combination of low temperature SiGe, dual stress SiN liner and low thermal budget metallization, drive current of 725/940 uA/um in PMOS and NMOS were achieved at Ioff = 100 nA/um with Vd = 1.0V.