Session 8A-3

New Findings on Coulomb Scattering Mobility inStrained-Si nFETs
and its Physical Understanding

 

Abstract

In this paper, the impact of strain on the electron mobility limited by Coulomb scattering (interface states Nit and substrate impurities NA), is experimentally examined for the first time. Compared to Si devices, the mobility limited by NA is enhanced in strained Si whereas the mobility limited by Nit is degraded. It is also found that the interface state generation in strained Si is smaller than in Si. This fact is beneficial to the device performance as well as the MOS device reliability.