Session 8A-5

High-Field Electron Mobility in Biaxially-tensile Strained SOI: Low Temperature
Measurement and Correlation with the Surface Morphology

 

Abstract

This work proposes an experimental and theoretical investigation of the physical mechanisms responsible for the high field mobility enhancement in sSOI devices. For the first time, we show by AFM measurements that the surface roughness of sSi is drastically reduced compared to unstrained Si. Introduced into a Kubo-Greenwood model, this improved roughness perfectly reproduces the experimental mobility enhancement at high effective fields (1MV/cm) for a wide range of temperature (50K-300K).