Session 8B-2

A Novel Gate-Injection Program/Erase P-ChannelNAND-Type
Flash Memory with High (10M Cycle)Endurance

 

Abstract

We have successfully developed a novel nitride-trapping non-volatile memory device using gate injection for program and erase operations. The device is a p-channel bandgap-engineered SONOS (BE-SONOS), but with ultra-thin ONO tunneling dielectric grown on top of the trapping nitride. Programming and erasing are by -FN electron injection and +FN hole injection from the poly gate, respectively. Very high endurance (10M cycle) is achieved owing to suppressed channel interface (S.S. and gm) degradation. Successful p-channel NAND array characteristics including the program inhibit and reading characteristics are demonstrated.