Session 8B-4

A Nanowire Transistor for High PerformanceLogic
and Terabit Non-Volatile Memory Devices

 

Abstract

A silicon nanowire-FET (SiNAWI-FET) for high performance logic with consideration of current direction effects and terabit non-volatile memory (NVM) using an 8nm SiNAWI-NVM with oxide/nitride/oxide (ONO) and omega-gate structure is reported for the first time. CMOS SiNAWI-FET showed the highest driving current on (110)/<110> crystal orientation without device rotation. Utilizing an 7nm spherical nanowire on the 8nm SiNAWI-NVM with ONO structure, 1.7V VT-window was achieved from 12V/80usec program conditions with retention enhancement.