Session 8B-5
Quantum Confinement Effect for Efficient Hole Injection
in MONOS-Type
Nonvolatile Memory - the Role of Ultrathin i-Si/P+Poly-Si
Stacked
Gate Structure Fabricated by Laser Spike Annealing
Abstract
| A novel hole injection method is proposed for fast and damage-free erasing operation in MONOS-type nonvolatile memory. Thin intrinsic Si layer at the interface between gate insulator and p+ poly-Si gate produces quantum confinement level of hole. This lowers effective band offset, thus, significantly increases hole tunneling probability from the gate. By applying the novel gate structure to MONOS cells, we successfully demonstrate memory operation with 100 times faster erase speed and larger window than conventional gate. |