Session 9A-2

A Novel Hafnium Carbide (HfC_x) Metal Gate Electrode
for NMOS Device Application

 

Abstract

Hafnium carbide (HfCx) is investigated as a novel metal gate electrode with good thermal stability for the first time. HfCx shows a very low work function of 3.8 eV on HfO2, suitable for NMOS device applications, and provides superior oxygen diffusion barrier property during high temperature annealing. In addition, there is no sign of significant Fermi level pinning with HfO2 dielectric