Session 9B-1

Improved Cell Performance for Sub-50 nm DRAM
with Manufacturable Bulk FinFET Structure

 

Abstract

FinFET, the milestone for sub 50 nm DRAM cell transistor has been successfully demonstrated by a unique fabricating method with novel concept. We obtained a core solution of front end of line process and structure, focusing on short channel behavior, off state leakage, and saturation current.