Session 9B-3

Floating Body DRAM Characteristics of Silicon-On-ONO (SOONO)
Devices for System-on-Chip(SoC) Applications

 

Abstract

We completed the demonstration of three key functions of SOONO devices by demonstrating the DRAM characteristics of FD and PD SOONO devices successfully, together with the previously reported logic transistor and flash memory characteristics. Floating body SOONO DRAM cells implemented on electrically thin buried insulator shows the large sensing margins more than 5uA in FD device with long data retention and nondestructive read even at the W/L of 60/55nm which is the smallest 1T DRAM ever reported.