Session 17-4

A CMOS Image Sensor With 2.5-e- Random Noise and 110-ke- Full Well Capacity Using Column Source Follower Readout Circuits

 

Abstract

A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-um pitch, 800(H) x 600(V) pixels CMOS image sensor fabricated by a 0.18-um 2P3M technology has achieved fully linear response, 0.98 column readout gain, 100-uV/e- conversion gain, 2.5-e- random noise, 110,000-e- full well capacity and 93-dB dynamic range in one exposure.