Session 19-1

Multi-phase 1GHz Voltage
Doubler Charge-Pump in 32nm logic process

 

Abstract

Multi-phase 1GHz charge-pump in 32nm logic process demonstrates a compact area (159X42um2) for boosting 2Vth to 3-4Vth. Self contained clocking with metal-finger capacitors enable embedding voltage boost functionality in close proximity to digital logic for supplying low current Vmin requirement of logic blocks. Multi-phase operation avoids the need for a storage reservoir capacitor, enables fast (5ns) ON/OFF output transition, and provides a gated power delivery solution for blocks having state preservation Vmin requirements. Charge pump operates as 1V to 2V doubler with >5mA capability.