Session 24-2

60-GHz Hybrid Transmit/Receive Switch Using p-n Diode and MOS Transistors

 

Abstract

A single-pole-double-throw transmit/receive switch operating at 57~66 GHz frequency band is realized using a shunt p-n diode and shunt NMOS transistors in 130-nm CMOS technology. The switch exhibits insertion loss of ~2 dB and 3 dB for TX and RX mode at 60 GHz. Measured input 1-dB compression point is limited by the measurement setup and higher than 13 dBm, and isolation is ~20 dB at 60 GHz.