Session 3-4

High-Density 3-D Metal-Fuse PROM featuring
1.37um2 1T1R Bit Cell in 32nm
High-k Metal-Gate CMOS Technology

 

Abstract

A 4Kbit high-density PROM array design featuring a high-volume manufacturable metal-fuse technology in 32nm high-k metal-gate CMOS is introduced. Metal-fuse technology enables a 3-D cell topology with stacked program device and fuse element, achieving a 1.37um2 cell footprint. The 128-row by 32-column array with an asymmetric tunable static sense scheme can operate down to 0.5V and provides multi-bit programming capability. A 100% programming success rate at 2V-1us condition is achieved along with security protection.