Session 3-5
A 1.25um2 Cell 32Kb
Electrical Fuse
Memory in
32nm CMOS with 700mV
Vddmin and Parallel/Serial
Interface
Abstract
This paper presents a highly optimized 32Kb electrical fuse memory in 32nm CMOS with 1.25um2 small cell, the smallest cell ever published. This macro has low program current of 6mA at 2.5V for 0.5us, high-gain sense amplifier to achieve 700mV Vddmin, and parallel/serial interfaces for high density or low pin-count applications. |