Session 8-1

Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD)

 

Abstract

Ferroelectric(Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. By introducing a batch write algorithm, data fragmentation in random write is eliminated. Consequently, the SSD performance can double. The NV-page buffer realizes a highly reliable operation even in a power outage. With a low program/erase voltage, 6V, and a high endurance, 100Million cycles, the proposed Fe-NAND is most suitable for a highly reliable high-speed low power data center application in enterprise SSD.