Session 8-3

A 5ns Fast Write Multi-Level Non-Volatile 1 K bits RRAM
Memory with Advance Write Scheme

 

Abstract

A 1-Kb RRAM (HfO2 base resistive random access memory) for high speed nonvolatile memory application is proposed. With this chip, a high speed write characteristic in the RRAM cell can be achieved. The present circuit design uses a 1T1R RRAM (1 transistor/1 resistive memory) cell and voltage write circuit which redistricts the through-cell current. The random write time can be as fast as 5ns in 0.18um TSMC process with VDD = 3.3V.