Session 10A-2

Multi-Layered Vertical Gate NAND Flash Overcoming
Stacking Limit for Terabit Density Storage

Abstract
Vertical Gate NAND (VG-NAND) Flash array with multi- active layers has been successfully integrated for the first time. VG-NAND confirmed stable operations of program, body erase, and read. There is no aggravation on program disturbance with increased number of layers due to an architecture of VG-NAND with vertical blocks