Session 10B-3
Charged defects reduction in gate insulator
with multivalent materials
| High-k MOSFETs are very sensitive to process conditions, especially to the oxygen potential in the ambient. This caused the instability in Vfb and Vth. In this study, we demonstrated that the characteristics of the high-k film can be controlled using a multivalent material. One of the most advantages of this method is that the possibility of the controlling the oxygen potential to be same in the production process |