Session 10B-5

A Direct Observation on the Structure Evolution
of Memory-Switching Phenomena Using In-Situ TEM

 

Abstract

This paper presents a real-time observation on microstructure evolution under electrical programming pulses directly on phase-change memory cells developed with 90-nm technology for the first time. The feasibility of this in-situ TEM experiment was successfully confirmed through the observed memory-switching behavior, and it was found that slow quenching crystallization enhanced the grain growth rather than the nucleation mechanism.