Session 11A-4
The Study of Mobility-Tinv Trade-off
in Deeply Scaled High-k / Metal Gate Device
and Scaling Design Guideline for 22nm-node Generation
| The trade-off between Tinv scaling and carrier mobility degradation in deeply scaled HK/MG nMOSFETs has been investigated based on experimental results. It can be realized the theoretical Ion components separation in Lg=25nm devices for the first time. As a result, it is clarified that the aggressive Tinv scaling can achieve the performance improvement even if some degree mobility degradation occurs because mobility impact decreases with Lg and Tinv scaling impact becomes strong. Furthermore, we have introduced the effective Tinv scaling (novel SiON) process and demonstrated its excellent device performance (Ion=1mA/um @Ioff=100nA/um, Lg=25nm, Vdd=1.0V, Tinv=1.13nm, without any performance booster technology). |