Session 11B-3

Performance Breakthrough in NOR Flash Memory
with Dopant-Segregated Schottky-Barrier (DSSB) SONOS Devices

 

Abstract

Novel dopant-segregated-Schottky-barrier (DSSB) SONOS devices as forms of double-gate and highly scaled all-around-gate are demonstrated for NOR Flash memory. Source-side injection caused by sharp energy-band bending in DSSB device results in a high-speed programming (Vth shift of 4.2V at 320ns) at a low program bias. Moreover, faster programming speed in a narrower fin width due to low parasitic resistance and enhanced gate controllability is achieved. Drain disturbance-free characteristics in programmed cells are confirmed as well.