Session 12A-1

SPRAM with large thermal stability
for high immunity to read disturbance
and long retention for high-temperature operation

Abstract
 We investigate the effect of temperature on current-induced magnetization switching in SPRAM consisting of MgO-barrier-based MTJs with a synthetic ferrimagnetic recording layer (SyF) by comparing the MJTs to those with a single ferromagnetic recording layer. It is found that SPRAM using MTJs with a SyF has two advantages for high-temperature operation: 1) A thermal stability factor as high as 64 at 150ºC, which would ensure ten-year retention and ten-year immunity to read disturbance; and 2) an increase of the aspect ratio in the SyF, which leads to high coercivity , resulting in two stable states ("0" or "1") at high temperature.