Session 12A-2

Low-Current Perpendicular Domain Wall Motion
Cell for Scalable High-Speed MRAM

 

Abstract

We have developed a new magnetic random access memory with current-induced domain wall motion (DW-motion MRAM) using perpendicular magnetic anisotropy materials. We confirmed its potentials of 0.1-mA and 2-ns writing with sufficient thermal stability, and also demonstrated good memory operations. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories such as eSRAM and eDRAM.