Session 12A-4

Highly scalable Z-RAM with remarkably long data retention
for DRAM application

 

Abstract

The operating characteristics and retention times of floating body cells and arrays using Z-RAM technology fabricated on a 50nm DRAM process are presented. For the first time, data retention time longer than 8s at 93oC and 1.6V wide programming window are obtained on floating body cells as small as 54nm x 54nm. These results demonstrate the suitability of floating body memories for DRAM applications. These improvements were obtained through optimization of DRAM technology such as junction engineering, thermal treatments, and improved passivation processes.