Session 12B-2
High velocity Si-nanodot : a candidate
for SRAM applications at 16nm node and below
| We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon On Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanowire state-of-the-art is obtained thanks to a high quality transport. |