Session 12B-3

High Mobility metal S/D III-V-On-Insulator MOSFETs
on a Si substrate using direct wafer bonding

 

Abstract

III-V semiconductors on insulator structures have successfully been fabricated on Si using direct wafer bonding. Metal source/drain InGaAs-On-Insulator n-MOSFETs on a Si substrate have exhibited superior device operation with high electron mobility of 1000 cm2/Vs, which amounts to the enhancement factor of 1.59x against the Si n-MOSFET at an identical Ns. This is the first demonstration of the thin-body III-V-OI MOSFETs on a Si substrate as well as the metal source/drain InGaAs MOSFETs.