Session 12B-4
Strained In0.53Ga0.47As n-MOSFETs:
Performance Boost with in-situ Doped Lattice-Mismatched Source/Drain Stressors and Interface Engineering
| We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In0.4Ga0.6As S/D on the In0.53Ga0.47As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated a SiH4+NH3 passivation for reduction of interface state density on In0.53Ga0.47As for the first time. |