Session 2A-1

Comparative Study between Si (110) and (100) Substrates
on Mobility and Velocity Enhancements
for Short-Channel Highly-Strained PFETs

 

Abstract

Mobility and velocity enhancements of hole on Si (110) and (100) substrates are accurately investigated for short-channel highly-strained pFETs. Local channel stress in short gate length is successfully observed for damascene gate pFETs with stressors by UV-Raman spectroscopy. Mobility and velocity enhancements under high channel stress for (100) substrate are larger than those for (110). Therefore, saturation current on (100) is larger than that on (110) for pFETs with higher channel stress.