Session 2A-2

New Experimental Insight into Ballisticity
of Transport in Strained Bulk MOSFETs

 

Abstract

This paper proposes a new expression unifying all transport mechanisms (drift-diffusion, velocity-saturation and quasi-ballistic). This enables an experimental extraction of the limiting velocity and also, for the first time, a determination of its nature (thermal injection or velocity saturation). We show that the observed increase in the limiting velocity in short and strained devices was confusingly interpreted as an evidence of increasing ballisticity whereas the transport remains velocity-saturation limited down to 20nm channel lengths. However, the good news we confirm experimentally is that this increase promising an increase in Ion, even if the transport is velocity saturated.