Session 2A-4

Analyses and Optimization of Strained-SiGe
on Si pMOSFETs by using Full-Band Device Simulation

 

Abstract

Transport properties of strained-SiGe on Si channel pMOSFETs is analyzed by full-band device simulation. Although injection velocity (vinj) of SiGe-devices can be significantly enhanced over Si, Ion enhancement factor for short-channel SiGe devices is much smaller than expected from vinj due to anomalous reduction of injection carrier density caused by the lower density-of-states. To increase short-channel Ion, higher Ge-content is desirable because of the higher vinj, though too high Ge-content reduces critical SiGe-thickness, thereby degrading the low field mobility. Additional uniaxial <110> strain is very effective for boosting SiGe device performance.