Session 2B-2

Vertical Cross-point Resistance Change Memory
for Ultra-High Density Non-volatile Memory Applications

 

Abstract

Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demonstrated with a NiO switching layer. They showed both unipolar and bipolar switching mode. Several issues in realization for VCPA and their possible solutions are discussed.